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1

Gallium arsenide and other compound semiconductors on silicon

Fang, S. F., Adomi, K., Iyer, S., MorkocÌ§, H., Zabel, H., Choi, C., Otsuka, N.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 3.59 MB

english, 1990

2

Gallium desorption kinetics on (0001) GaN surface during the growth of GaN by molecular-beam epitaxy

He, L., Moon, Y. T., Xie, J., MunÌoz, M., Johnstone, D., MorkocÌ§, H.

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 330 KB

english, 2006

3

Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy

Fischer, R., Masselink, W. T., Klem, J., Henderson, T., McGlinn, T. C., Klein, M. V., MorkocÌ§, H., Mazur, J. H., Washburn, J.

Journal:

Journal of Applied Physics

Year:

1985

Language:

english

File:

PDF, 1007 KB

english, 1985

4

Resonant cavity enhanced AlGaAs/GaAs heterojunction phototransistors with an intermediate InGaAs layer in the collector

UÌnluÌ, M. S., Kishino, K., Chyi, J-I., Arsenault, L., Reed, J., Mohammad, S. Noor, MorkocÌ§, H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 653 KB

english, 1990

5

Very low resistance multilayer Ohmic contact to n-GaN

Fan, Zhifang, Mohammad, S. Noor, Kim, Wook, Aktas, OÌzguÌr, Botchkarev, Andrei E., MorkocÌ§, Hadis

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 384 KB

english, 1996

6

Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure

Cheng, H., Kurdak, CÌ§., Leach, J. H., Wu, M., MorkocÌ§, H.

Journal:

Applied Physics Letters

Year:

2010

Language:

english

File:

PDF, 639 KB

english, 2010

7

Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaN

Ruvimov, S., Liliental-Weber, Z., Washburn, J., Duxstad, K. J., Haller, E. E., Fan, Z.-F., Mohammad, S. N., Kim, W., Botchkarev, A. E., MorkocÌ§, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 663 KB

english, 1996

8

Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy

Martin, G., Botchkarev, A., Rockett, A., MorkocÌ§, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 359 KB

english, 1996

9

Optical reflectance in GaAs/AlGaAs quantum wells

Pearah, P. J., Klem, J., Henderson, T., Peng, C. K., MorkocÌ§, H., Reynolds, D. C., Litton, C. W.

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 520 KB

english, 1986

10

Nonequilibrium electron distributions and phonon dynamics in wurtzite GaN

Tsen, K. T., Joshi, R. P., Ferry, D. K., Botchkarev, A., Sverdlov, B., Salvador, A., MorkocÌ§, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 394 KB

english, 1996

11

Band structure and confined energy levels of the Si[sub 3]N[sub 4]/Si/GaAs system

Chen, Z., Mohammad, S. N., Park, D.-G., Diatezua, D. M., MorkocÌ§, H., Chang, Y. C.

Journal:

Journal of Applied Physics

Year:

1997

Language:

english

File:

PDF, 390 KB

english, 1997

12

Observation of a negative differential resistance due to tunneling through a single barrier into a quantum well

MorkocÌ§, H., Chen, J., Reddy, U. K., Henderson, T., Luryi, S.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 591 KB

english, 1986

13

Growth of InSb and InAs1âxSbx on GaAs by molecular beam epitaxy

Chyi, J.-I., Kalem, S., Kumar, N. S., Litton, C. W., MorkocÌ§, H.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 613 KB

english, 1988

14

Ordering in GaAs1âxSbx grown by molecular beam epitaxy

Ihm, Yeong-Eon, Otsuka, N., Klem, J., MorkocÌ§, H.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 695 KB

english, 1987

15

Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels

Matulionis, A., Liberis, J., MatulionieneÌ, I., Ramonas, M., SÌermuksÌnis, E., Leach, J. H., Wu, M., Ni, X., Li, X., MorkocÌ§, H.

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 394 KB

english, 2009

16

Piezoelectric effects on the optical properties of GaN/Al[sub x]Ga[sub 1âx]N multiple quantum wells

Kim, H. S., Lin, J. Y., Jiang, H. X., Chow, W. W., Botchkarev, A., MorkocÌ§, H.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 364 KB

english, 1998

17

GaN epitaxy on thermally treated c-plane bulk ZnO substrates with O and Zn faces

Gu, Xing, Reshchikov, Michael A., Teke, Ali, Johnstone, Daniel, MorkocÌ§, Hadis, Nemeth, Bill, Nause, Jeff

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 461 KB

english, 2004

18

Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy

Hamdani, F., Yeadon, M., Smith, David J., Tang, H., Kim, W., Salvador, A., Botchkarev, A. E., Gibson, J. M., Polyakov, A. Y., Skowronski, M., MorkocÌ§, H.

Journal:

Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 568 KB

english, 1998

19

Infrared photoluminescence of InAs epilayers grown on GaAs and Si substrates

Grober, Robert D., Drew, H. D., Chyi, Jen-Inn, Kalem, S., MorkocÌ§, H.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 491 KB

english, 1989

20

Systematic measurement of Al[sub x]Ga[sub 1âx]N refractive indices

OÌzguÌr, UÌmit, Webb-Wood, Grady, Everitt, Henry O., Yun, Feng, MorkocÌ§, Hadis

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 364 KB

english, 2001

21

Impact of active layer design on InGaN radiative recombination coefficient and LED performance

Li, X., Okur, S., Zhang, F., Avrutin, V., OÌzguÌr, UÌ., MorkocÌ§, H., Hong, S. M., Yen, S. H., Hsu, T. S., Matulionis, A.

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 1.44 MB

english, 2012

22

Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them

Ni, X., Li, X., Lee, J., Liu, S., Avrutin, V., OÌzguÌr, UÌ., MorkocÌ§, H., Matulionis, A.

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 527 KB

english, 2010

23

Effect of hydrostatic pressure on the current-voltage characteristics of GaNâAlGaNâGaN heterostructure devices

Liu, Y., Kauser, M. Z., Schroepfer, D. D., Ruden, P. P., Xie, J., Moon, Y. T., Onojima, N., MorkocÌ§, H., Son, K.-A., Nathan, M. I.

Journal:

Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 343 KB

english, 2006

24

GaN grown on hydrogen plasma cleaned 6H-SiC substrates

Lin, M. E., Strite, S., Agarwal, A., Salvador, A., Zhou, G. L., Teraguchi, N., Rockett, A., MorkocÌ§, H.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 608 KB

english, 1993

25

Room-temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxy

Schmidt, T. J., Yang, X. H., Shan, W., Song, J. J., Salvador, A., Kim, W., Aktas, OÌ., Botchkarev, A., MorkocÌ§, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 45 KB

english, 1996

26

Efficacy of single and double SiN[sub x] interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy

Yun, F., Moon, Y. -T., Fu, Y., Zhu, K., OzguÌr, UÌ., MorkocÌ§, H., Inoki, C. K., Kuan, T. S., Sagar, Ashutosh, Feenstra, R. M.

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 833 KB

english, 2005

27

Persistent photoconductivity in (Al,Ga)As/GaAs modulation doped structures: Dependence on structure and growth temperature

Klem, J., Masselink, W. T., Arnold, D., Fischer, R., Drummond, T. J., MorkocÌ§, H., Lee, K., Shur, M. S.

Journal:

Journal of Applied Physics

Year:

1983

Language:

english

File:

PDF, 582 KB

english, 1983

28

Resonant tunneling oscillations in a GaAs-AlxGa1âxAs heterostructure at room temperature

Shewchuk, T. J., Chapin, P. C., Coleman, P. D., Kopp, W., Fischer, R., MorkocÌ§, H.

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 454 KB

english, 1985

29

Dielectric functions and electronic band structure of lead zirconate titanate thin films

Lee, Hosun, Kang, Youn Seon, Cho, Sang-Jun, Xiao, Bo, MorkocÌ§, Hadis, Kang, Tae Dong, Lee, Ghil Soo, Li, Jingbo, Wei, Su-Huai, Snyder, P. G., Evans, J. T.

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 517 KB

english, 2005

30

Thermal stability of Si[sub 3]N[sub 4]/Si/GaAs interfaces

Park, D.-G., Chen, Z., Diatezua, D. M., Wang, Z., Rockett, A., MorkocÌ§, H., Alterovitz, S. A.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 281 KB

english, 1997

31

Epitaxial lateral overgrowth of (1122) semipolar GaN on (1100) m-plane sapphire by metalorganic chemical vapor deposition

Ni, X., OÌzguÌr, UÌ., Baski, A. A., MorkocÌ§, H., Zhou, Lin, Smith, David J., Tran, C. A.

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 579 KB

english, 2007

32

High-field electron-drift velocity and temperature in gallium phosphide

Arora, Vijay K., Mui, David S. L., MorkocÌ§, Hadis

Journal:

Journal of Applied Physics

Year:

1987

Language:

english

File:

PDF, 459 KB

english, 1987

33

Stimulated emission and time-resolved photoluminescence in rf-sputtered ZnO thin films

OÌzguÌr, UÌ., Teke, A., Liu, C., Cho, S.-J., MorkocÌ§, H., Everitt, H. O.

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 390 KB

english, 2004

34

Hexagonal-based pyramid void defects in GaN and InGaN

Yankovich, A. B., Kvit, A. V., Li, X., Zhang, F., Avrutin, V., Liu, H. Y., Izyumskaya, N., OÌzguÌr, UÌ., MorkocÌ§, H., Voyles, P. M.

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 1.85 MB

english, 2012

35

Carrier dynamics in bulk GaN

SÌcÌajev, Patrik, JarasÌiuÌnas, KeÌ¨stutis, Okur, Serdal, OÌzguÌr, UÌmit, MorkocÌ§, Hadis

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 1.39 MB

english, 2012

36

Photoresponse of n-ZnOâp-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy

Alivov, Ya. I., OÌzguÌr, UÌ., DogÌan, S., Johnstone, D., Avrutin, V., Onojima, N., Liu, C., Xie, J., Fan, Q., MorkocÌ§, H.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 371 KB

english, 2005

37

Interference effects probed by photoreflectance spectroscopy

Huang, D., Mui, D., MorkocÌ§, H.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 666 KB

english, 1989

38

Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy

Martin, G., Strite, S., Botchkarev, A., Agarwal, A., Rockett, A., MorkocÌ§, H., Lambrecht, W. R. L., Segall, B.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 638 KB

english, 1994

39

Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy

Huang, D., Visconti, P., Jones, K. M., Reshchikov, M. A., Yun, F., Baski, A. A., King, T., MorkocÌ§, H.

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 462 KB

english, 2001

40

Second order Raman spectroscopy of the wurtzite form of GaN

Murugkar, S., Merlin, R., Botchkarev, A., Salvador, A., MorkocÌ§, H.

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 500 KB

english, 1995

41

Subpicosecond time-resolved Raman studies of LO phonons in GaN: Dependence on photoexcited carrier density

Tsen, K. T., Kiang, Juliann G., Ferry, D. K., MorkocÌ§, H.

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 239 KB

english, 2006

42

Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields

ArdaravicÌius, L., Ramonas, M., Liberis, J., KiprijanovicÌ, O., Matulionis, A., Xie, J., Wu, M., Leach, J. H., MorkocÌ§, H.

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 504 KB

english, 2009

43

Theoretical and experimental capacitance-voltage behavior of Al0.3Ga0.7As/GaAs modulation-doped heterojunctions: Relation of conduction-band discontinuity to donor energy

G. B. Norris, D. C. Look, W. Kopp, J. Klem, H. MorkocÌ§

Year:

1985

Language:

english

File:

PDF, 560 KB

english, 1985

44

Comparative study of Ga- and N-polar GaN films grown on sapphire substrates by molecular beam epitaxy

D. Huang, M. A. Reshchikov, P. Visconti, F. Yun, A. A. Baski, T. King, H. MorkocÌ§, J. Jasinski, Z. Liliental-weber, C. W. Litton

Year:

2002

Language:

english

File:

PDF, 1.14 MB

english, 2002